BUH315DFH high voltage fast-switching npn power transistor n new fully plastic to-220 for high voltage applications n high voltage capability ( > 1500 v ) n fully insulated package (u.l. compliant) for easy mounting n npn transistor with integrated freewheeling diode n creepage distance path > 4 mm applications n horizontal deflection for colour tvs description the device is manufactured using multiepitaxial mesa technology for cost-effective high performance and uses a hollow emitter structure to enhance switching speeds. the buh series is designed for use in horizontal deflection circuits in televisions and monitors. ? internal schematic diagram july 2002 absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) 1500 v v ceo collector-emitter voltage (i b = 0) 700 v v ebo emitter-base voltage (i c = 0) 10 v i c collector current 6 a i cm collector peak current (t p < 5 ms) 12 a i b base current 3 a i bm base peak current (t p < 5 ms) 5 a p tot total dissipation at t c = 25 o c40w v isol insulation withstand voltage (rms) from all three leads to exernal heatsink 2500 v t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c to-220fh 1/7
thermal data r thj-case thermal resistance junction-case max 3.125 o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be = 0) v ce = 1500 v 200 m a i ebo emitter cut-off current (i c = 0) v eb = 5 v 300 ma v ce(sat) * collector-emitter saturation voltage i c = 3 a i b = 1 a 1.5 v v be(sat) * base-emitter saturation voltage i c = 3 a i b = 1 a 1.5 v h fe * dc current gain i c = 3 a v ce = 5 v i c = 3 a v ce = 5 v t j = 100 o c 4 2.5 9 t s t f resistive load storage time fall time v cc = 400 v i c = 3 a i b1 = 1 a i b2 = -1.5 a 1.8 200 2.7 300 m s ns t s t f inductive load storage time fall time i c = 3 a f = 15625 hz i b1 = 1 a i b2 = 1.5 a v ceflyback = 1050 sin ? ? p 5 10 6 ? ? t v 2.7 350 m s ns v f diode forward voltage i f = 3 a 2.5 v * pulsed: pulse duration = 300 m s, duty cycle 1.5 % safe operating area thermal impedance BUH315DFH 2/7
derating curve collector emitter saturation voltage power losses at 16 khz dc current gain base emitter saturation voltage switching time inductive load at 16khz (see figure 2) BUH315DFH 3/7
switching time resistive load at 16 khz in order to saturate the power switch and reduce conduction losses, adequate direct base current i b1 has to be provided for the lowest gain h fe at 100 o c (line scan phase). on the other hand, negative base current i b2 must be provided to turn off the power transistor (retrace phase). most of the dissipation, in the deflection application, occurs at switch-off. therefore it is essential to determine the value of i b2 which minimizes power losses, fall time t f and, consequently, t j . a new set of curves have been defined to give total power losses, t s and t f as a function of i b2 at 16 khz scanning frequencies the optimum negative drive. the test circuit is illustrated in fig. 1. inductance l 1 serves to control the slope of the negative base current i b2 to recombine the excess carrier in the collector when base current is still present, this would avoid any tailing phenomenon in the collector current. the values of l and c are calculated from the following equations: 1 2 l ( i c ) 2 = 1 2 c ( v cefly ) 2 w = 2 p f = 1 ? ``` ` l c where i c = operating collector current, v cefly = flyback voltage, f= frequency of oscillation during retrace. base drive information BUH315DFH 4/7
figure 1: inductive load switching test circuits. figure 2: switching waveforms in a deflection circuit BUH315DFH 5/7
dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.3 1.8 0.051 0.070 f2 1.3 1.8 0.051 0.070 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l5 3.4 0.134 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 l8 14.5 15 0.570 0.590 l9 2.4 0.094 p011w to-220fh (fully plastic high voltage) mechanical data BUH315DFH 6/7
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2002 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com BUH315DFH 7/7
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